BS IEC 63068-1:2019 pdf free.Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Part 1: Classification of defects.
This part of lEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide)epitaxial layers.The defects are classified on the basis of their crystallographic structures andrecognized by non-destructive detection methods including bright-field OM(opticalmicroscopy),PL (photoluminescence), and XRT (X-ray topography) images.
2Normative references
The following documents are referred to in the text in such a way that some or all of theircontent constitutes requirements of this document. For dated references,only the editioncited applies. For undated references, the latest edition of the referenced document (includingany amendments) applies.
There are no normative references in this document.
3Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and lEC maintain terminological databases for use in standardization at the followingaddresses:
IEC Electropedia: available at http://www.electropedia.org/
ISO Online browsing platform: available at http://www.iso.org/obp
3.1silicon carbidesic semiconductor crystal composed of silicon and carbon，which exhibits a large number ofpolytypes such as 3C, 4H,and 6H.
The terminology, schematic illustrations, plan-view observation images of each defect areshown in 4.2.2 to 4.2.15.All the figures show the following:
a) a schematic illustration of each defect in the homoepitaxial wafer;
b) a schematic illustration of the plan-view observation image of each defect;c) a bright-field optical microscope image of each figure;
d) a photoluminescence mapping image of each figure;e) an X-ray topographic image of each figure.
All the images are obtained from 4H-SiC homoepitaxial wafers with an off-cut direction of [1120] and an off-cut angle of 4.The photoluminescence mapping image was acquired with a340 nm excitation at room temperature, and the luminescence wavelength detected to obtainthe image is indicated in a note within each text describing the relevant defect. All the X-raytopographic images were taken under g = 1128 diffraction condition.
4.2.2 Point defect
The class of point defect means a crystal defect that occurs at or around a single lattice site.
NOTE Point defects cannot be detected using optical inspection and photoluminescence methods, and thus theyare not treated in this document.BS IEC 63068-1 pdf download.BS IEC 63068-1 pdf download.